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| 包装类型 | 数量 | 单价 (不含增值税): | 合计 |
|---|---|---|---|
| 切割卷带 | 1 | CNY10.010 | CNY10.01 |
| 数量 | 价钱 (含税) |
|---|---|
| 1+ | CNY10.010 (CNY11.3113) |
| 10+ | CNY6.600 (CNY7.458) |
| 50+ | CNY6.220 (CNY7.0286) |
| 100+ | CNY5.840 (CNY6.5992) |
| 250+ | CNY5.480 (CNY6.1924) |
| 500+ | CNY5.260 (CNY5.9438) |
| 1000+ | CNY4.980 (CNY5.6274) |
| 2500+ | CNY4.770 (CNY5.3901) |
产品信息
产品概述
The FAN3217TMX is a TTL input dual non- inverting output Low-Side Gate Driver designed to drive N-channel enhancement-mode MOSFETs in low-side switching applications by providing high peak current pulses during the short switching intervals. Internal circuitry provides an under-voltage lockout function by holding the output LOW until the supply voltage is within the operating range. In addition, the driver features matched internal propagation delays between A and B channels for applications requiring dual gate drives with critical timing, such as synchronous rectifiers. This also enables connecting two drivers in parallel to effectively double the current capability driving a single MOSFET. This bipolar-MOSFET combination provides high current during the Miller plateau stage of the MOSFET turn-OB/turn-OFF process to minimize switching loss, while providing rail-to-rail voltage swing and reverse current capability.
- Industry-standard pin-outs
- Dual non-inverting channels
- Internal resistors turn driver OFF if no inputs
- 12/9ns Typical rise/fall times with 1nF load
- Typical propagation delay under 20ns matched within 1ns to the other channel
- Double current capability by paralleling channels
技术规格
2放大器
低压侧
8引脚
表面安装
3A
4.5V
-40°C
-
-
MSL 1 -无限制
-
MOSFET
SOIC
非反向
3A
18V
125°C
19ns
-
No SVHC (25-Jun-2025)
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法律与环境
进行最后一道重要生产流程所在的地区原产地:Thailand
进行最后一道重要生产流程所在的地区
RoHS
RoHS
产品合规证书

