PBSS8110T,215

PBSS8110T,215 is a NPN low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Typical applications include major application segments: automotive 42V power, telecom infrastructure, industrial, power management: DC/DC converters, supply line switching, battery charger, LCD backlighting, peripheral drivers: driver in low supply voltage applications (e.g. lamps and LEDs), inductive load driver (e.g. relays, buzzers and motors).

• Low collector-emitter saturation voltage VCEsat
• High collector current capability: IC and ICM
• Collector-base breakdown voltage is 120V min at IC=100µA; IE=0A; Tamb=25°C
• Collector-emitter breakdown voltage is 100V min (IC=10mA, IB=0A, pulsed; tp ≤ 300μ, T=25°C)
• Emitter-base breakdown voltage (collector open) is 5V min at IE=100µA; IC=0A; Tamb=25°C
• DC current gain is 150 min at VCE=10V; IC=1mA; Tamb=25°C
• Transition frequency is 100MHz min at VCE=10V; IC=50mA; f=100MHz;Tamb=25°C
• Collector-emitter saturation resistance is 200mohm typ at IC=1A, IB=100mA, Tamb =25°C
• Total power dissipation is 300mW max at Tamb ≤ 25°C
• Ambient temperature range from -65 to 150°C