CSC2690

The CSC2690 is a high-voltage NPN silicon transistor designed for medium-current applications. With a collector-emitter voltage rating of 120V and a current rating of 1.2A, it is optimized for use in switching and amplification circuits where reliable performance and efficiency are required. The transistor is housed in a compact TO-126-3 package, making it suitable for space-constrained designs. The CSC2690 transistor is a versatile and reliable NPN component, suitable for high-voltage and medium-current applications. Its robust design, high voltage rating, and compact TO-126-3 package make it a valuable choice for various electronic circuits and systems.

• Collector-Emitter Voltage (Vceo): 120V
• Collector-Base Voltage (Vcbo): 120V
• Emitter-Base Voltage (Vebo): 5V
• Collector Current (Ic): 1.2A
• Base Current (Ib): Application-dependent
• Power Dissipation (Pd): Typically up to 1.5W, depending on cooling and mounting conditions
• DC Current Gain (hFE): Typically ranges from 50 to 150 at Ic = 1A, Vce = 10V (values vary based on specific conditions)
• Package Type: TO-126-3
• Pin Configuration: 3 Pins (Collector, Base, Emitter)
• Mounting Style: Through-Hole
• Package Dimensions: Compact, allowing for efficient use of space in electronic designs
• Junction Temperature (Tj): -55°C to +150°C
• Thermal Resistance, Junction to Ambient (RθJA): Approximately 100°C/W (varies with heat sinking and mounting conditions)