打印页面
BD233
单晶体管 双极, NPN, 45 V, 2 A, 50 W, TO-126, 通孔
图片仅用于图解说明，详见产品说明。
制造商产品编号BD233
库存编号4343308
您的零件号
6,522 有货
需要更多？
6522 件可于 5-6 个工作日内送达(英国 库存)
| 数量 | 价钱 (含税) |
|---|---|
| 5+ | CNY6.760 (CNY7.6388) |
| 10+ | CNY4.120 (CNY4.6556) |
| 100+ | CNY2.930 (CNY3.3109) |
| 500+ | CNY2.090 (CNY2.3617) |
| 1000+ | CNY1.850 (CNY2.0905) |
| 5000+ | CNY1.590 (CNY1.7967) |
包装规格：每个
最低: 5
多件: 5
CNY33.80 (CNY38.19 含税)
品項附註
此订单的信息已添加到您的订单确认邮件、发票和发货通知中。
产品概述
The BD233 is an NPN silicon power transistor designed for high-current and high-power applications. It is widely used in electronic circuits such as power amplifiers, switching regulators, and motor controllers due to its robust performance and excellent electrical characteristics. The BD233 transistor is a versatile and reliable component for various high-power applications, offering robust performance and ease of use for engineers and hobbyists alike.
- Collector-Emitter Voltage (Vceo): 100V
- Collector-Base Voltage (Vcbo): 100V
- Emitter-Base Voltage (Vebo): 5V
- Collector Current (Ic): 4A
- Base Current (Ib): 1A
- Power Dissipation (Pd): 40W
- DC Current Gain (hFE): 25-125 at Ic = 1A, Vce = 2V
- Package Type: TO-220
- Pin Configuration: 3 Pins (Collector, Base, Emitter)
- Mounting Style: Through-Hole
- Junction Temperature (Tj): -65°C to +150°C
- Thermal Resistance, Junction to Case (RθJC): 3.12°C/W
技术规格
晶体管极性
NPN
连续集电极电流
2A
晶体管封装类型
TO-126
针脚数
3引脚
直流电流增益, Hfe 最小值
25hFE
产品范围
Multicomp Pro Bipolar Transistor NPN
湿气敏感性等级
0
最大集电极发射电压
45V
功率耗散
50W
晶体管安装
通孔
过渡频率
3MHz
工作温度最高值
150°C
合规
-
SVHC(高度关注物质)
No SVHC (25-Jun-2025)
技术文档 (1)
法律与环境
原产地：
进行最后一道重要生产流程所在的地区原产地：China
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地：China
进行最后一道重要生产流程所在的地区
税则号：85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规：是
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下载产品合规证书
产品合规证书
重量（千克）：.00065