MT53E256M32D1KS-046 AAT:L

MT53E256M32D1KS-046 AAT:L is a mobile LPDDR4 SDRAM. The mobile low-power DDR4 SDRAM with low VDDQ (LPDDR4X) is a high-speed, CMOS dynamic random-access memory device. This device is internally configured with 1 channel ×16 I/O, having 8-banks. LPDDR4 uses a double-data-rate (DDR) protocol on the DQ bus to achieve high-speed operation. The DDR interface transfers two data bits to each DQ lane in one clock cycle and is matched to a 16n-prefetch DRAM architecture.

• 16n prefetch DDR architecture, 8 internal banks per channel for concurrent operation
• Single-data-rate CMD/ADR entry, bidirectional/differential data strobe per byte lane
• Programmable READ and WRITE latencies (RL/WL), programmable and on-the-fly burst lengths (BL=16, 32)
• Directed per-bank refresh for concurrent bank operation and ease of command scheduling
• On-chip temperature sensor to control self refresh rate
• Partial-array self refresh (PASR), selectable output drive strength (DS), clock-stop capability
• 2133MHz clock rate, 4266Mb/s/pin data rate
• 1GB (8Gb) total density, 1.10V VDD2 / 0.60V VDDQ or 1.10V VDDQ operating voltage
• 256 Meg x 32 configuration, AEC-Q100 automotive grade
• 200-ball VFBGA 10 x 14.5 x 0.95mm (Ø0.40 SMD) package, -40°C to +105°C operating temperature