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| 数量 | 价钱 (含税) |
|---|---|
| 1+ | CNY19.120 (CNY21.6056) |
| 25+ | CNY18.740 (CNY21.1762) |
| 100+ | CNY18.360 (CNY20.7468) |
产品信息
产品概述
The MCP14E10-E/SN is a high-speed power MOSFET Driver with an enable function. It is capable of providing 3A of peak current. The dual inverting and complementary outputs are directly controlled from either TTL or CMOS. This device also features low shoot-through current, near matched rise/fall times and propagation delays, which make them ideal for high switching frequency applications. This device operates from a 4.5 to 18V single power supply and can easily charge and discharge 1800pF of MOSFET gate capacitance. It provides low enough impedance, in both the ON and OFF states, to ensure the MOSFETs intended state will not be affected even by large transients. The additional control of the driver output is allowed by the use of separate enable functions. The ENB_A and ENB_B pins are active-high and are internally pulled up to VDD. The pins may be left floating for standard operation. This device is highly latch-up resistant under any conditions within their power and voltage ratings.
- Independent enable function for each driver output
- Low shoot-through/cross-conduction current in output stage
- High capacitive load drive capability
- Short delay times
- Low supply current
- Logic input will withstand negative swing up to 5V
技术规格
2放大器
低压侧
8引脚
表面安装
3A
4.5V
-40°C
45ns
-
MSL 1 -无限制
-
MOSFET
SOIC
非反向
3A
18V
125°C
45ns
-
No SVHC (04-Feb-2026)
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法律与环境
进行最后一道重要生产流程所在的地区原产地:United States
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RoHS
RoHS
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