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可订购
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| 数量 | 价钱 (含税) |
|---|---|
| 1+ | CNY166.520 (CNY188.1676) |
| 5+ | CNY136.410 (CNY154.1433) |
| 10+ | CNY106.300 (CNY120.119) |
| 50+ | CNY103.250 (CNY116.6725) |
| 100+ | CNY100.190 (CNY113.2147) |
| 250+ | CNY98.190 (CNY110.9547) |
包装规格:每个
最低: 1
多件: 1
CNY166.52 (CNY188.17 含税)
品項附註
此订单的信息已添加到您的订单确认邮件、发票和发货通知中。
产品概述
The IXTK120N25P is a Polar™ single N-channel enhancement-mode Power MOSFET with fast intrinsic diode. It features reduced static drain-to-source ON-resistance and high power density. It is suitable for DC-to-DC converters, laser drivers, switched-mode and resonant-mode power supplies.
- International standard packages
- Avalanche rating
- Low package inductance
- Easy to mount
- Space saving
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技术规格
- 通道类型
N通道
电流, Id 连续120A
晶体管封装类型TO-264
Rds(on)测试电压10V
功率耗散700W
工作温度最高值175°C
合规-
SVHC(高度关注物质)No SVHC (17-Jan-2023)
漏源电压, Vds250V
漏源接通状态电阻0.024ohm
晶体管安装通孔
阈值栅源电压最大值5V
针脚数3引脚
产品范围-
湿气敏感性等级-
法律与环境
- 原产地:
进行最后一道重要生产流程所在的地区原产地:Germany
进行最后一道重要生产流程所在的地区税则号:85412900US ECCN:EAR99EU ECCN:NLRRoHS 合规:是RoHS
RoHS 邻苯二甲酸盐合规:是RoHS
SVHC:No SVHC (17-Jan-2023)下载产品合规证书产品合规证书
重量(千克):.027216