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SPW20N60CFDFKSA1
功率场效应管, MOSFET, N通道, 600 V, 8.3 A, 0.22 ohm, TO-247, 通孔
56 有货
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56 件可于 5-6 个工作日内送达(英国 库存)
| 数量 | 价钱 (含税) |
|---|---|
| 1+ | CNY38.010 (CNY42.9513) |
| 10+ | CNY32.830 (CNY37.0979) |
| 100+ | CNY19.730 (CNY22.2949) |
| 500+ | CNY19.340 (CNY21.8542) |
| 1000+ | CNY18.950 (CNY21.4135) |
包装规格：每个
最低: 1
多件: 1
CNY38.01 (CNY42.95 含税)
品項附註
此订单的信息已添加到您的订单确认邮件、发票和发货通知中。
产品概述
The SPW20N60CFD is a 650V CoolMOS™ N-channel Power MOSFET features ultra-low gate current. The CoolMOS™ is a revolutionary technology for high voltage power MOSFET, designed according to the super-junction(SJ) principle and pioneered by Infineon Technologies. 600V CoolMOS™ CFD combines the experience of the leading SJ MOSFET supplier with high class innovation. It has outstanding reliability with proven CoolMOS™ quality combined with high body diode ruggedness. It is suitable for server, telecom, PC power, solar, phase-shift ZVS, DC-to-AC power and adapter applications.
- New revolutionary high voltage technology
- Extreme dV/dt rated
- Qualified according to JEDEC for target applications
- Intrinsic fast-recovery body diode
- Periodic avalanche rated
- Extreme low reverse recovery charge
- High peak current capability
- Improved efficiency
- More efficient, more compact, lighter and cooler
警告
该产品的市场需求较大, 导致交货时间延长, 交货日期可能会有延迟.
技术规格
通道类型
N通道
电流, Id 连续
8.3A
晶体管封装类型
TO-247
Rds(on)测试电压
10V
功率耗散
35W
工作温度最高值
150°C
合规
-
SVHC(高度关注物质)
No SVHC (25-Jun-2025)
漏源电压, Vds
600V
漏源接通状态电阻
0.22ohm
晶体管安装
通孔
阈值栅源电压最大值
4V
针脚数
3引脚
产品范围
-
湿气敏感性等级
-
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法律与环境
原产地：
进行最后一道重要生产流程所在的地区原产地：Philippines
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地：Philippines
进行最后一道重要生产流程所在的地区
税则号：85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规：是
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
SVHC:No SVHC (25-Jun-2025)
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重量（千克）：.010886