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| 数量 | 价钱 (含税) |
|---|---|
| 1+ | CNY50.930 (CNY57.5509) |
| 10+ | CNY48.120 (CNY54.3756) |
| 25+ | CNY47.080 (CNY53.2004) |
| 50+ | CNY46.250 (CNY52.2625) |
| 100+ | CNY44.080 (CNY49.8104) |
| 250+ | CNY43.040 (CNY48.6352) |
| 500+ | CNY35.770 (CNY40.4201) |
产品信息
S29JL032J70BHI310 的替代之选
找到 1 件产品
产品概述
S29JL032J70BHI310 is a S29JL032J 32Mb (4M × 8Bit/2M × 16Bit), 3V, simultaneous read/write flash memory. Word mode data appears on DQ15–DQ0; byte mode data appears on DQ7–DQ0. The device is designed to be programmed in-system with the standard 3.0 volt VCC supply, and can also be programmed in standard EPROM programmers. Standard control pins—chip enable (CE#), write enable (WE#), and output enable (OE#)—control normal read and write operations, and avoid bus contention issues. The device requires only a single 3.0 volt power supply for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations.
- Data can be continuously read from one bank while executing erase/program functions in another bank
- Zero latency between read and write operations, multiple bank architecture
- Any combination of sectors can be erased, manufactured on 0.11µm process technology
- Zero power operation, compatible with JEDEC standards
- Sophisticated power management circuits reduce power consumed during inactive periods to nearly zero
- Pinout and software compatible with single-power-supply flash standard
- High performance, access time as fast as 60ns, ultra low power consumption
- Supports common flash memory interface (CFI), erase suspend/erase resume
- 70ns speed, fine-pitch ball grid array package
- Industrial (–40°C to +85°C) temperature range, top boot device, 2 banks: 8/24Mb
技术规格
并行NOR
32Mbit
2M x 16位 / 4M x 8位
并行
FBGA
-
70ns
3.6V
表面安装
85°C
No SVHC (25-Jun-2025)
32Mbit
2M x 16位 / 4M x 8位
并行口
FBGA
48引脚
-
2.7V
-
-40°C
3V Parallel NOR Flash Memories
法律与环境
进行最后一道重要生产流程所在的地区原产地:Thailand
进行最后一道重要生产流程所在的地区
RoHS
RoHS
产品合规证书
