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449 件可于 5-6 个工作日内送达(英国 库存)
| 数量 | 价钱 (含税) |
|---|---|
| 1+ | CNY146.540 (CNY165.5902) |
| 10+ | CNY138.640 (CNY156.6632) |
| 25+ | CNY136.070 (CNY153.7591) |
| 50+ | CNY132.810 (CNY150.0753) |
| 100+ | CNY128.760 (CNY145.4988) |
包装规格:每个
最低: 1
多件: 1
CNY146.54 (CNY165.59 含税)
品項附註
此订单的信息已添加到您的订单确认邮件、发票和发货通知中。
产品概述
S29GL01GT10TFI020 is a MIRRORBIT™ flash product fabricated on 45nm process technology. This device offers a fast page access time as fast as 15ns, with a corresponding random access time as fast as 100ns. It features a write buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes the device ideal for today’s embedded applications that require higher density, better performance, and lower power consumption.
- 100ns random access time, single supply (VCC) for read/program/erase (2.7V to 3.6V)
- 45-nm MIRRORBIT™ technology, wide I/O voltage range (VIO) from 1.65V to VCC
- ×8/×16 data bus, asynchronous 32-byte page read
- Single word and multiple program on same word options
- Automatic error checking and correction (ECC)-internal hardware ECC with single bit error correction
- Suspend and resume commands for program and erase operations
- Volatile and non-volatile protection methods for each sector
- Separate 2048-byte one-time program (OTP) array
- 100,000 program/erase cycles, 20-year data retention
- Industrial temperature range from -40°C to +85°C, 56-pin TSOP package
技术规格
闪存类型
并行NOR
记忆配置
128M x 8位
IC 外壳 / 封装
TSOP
时钟频率最大值
-
电源电压最小值
2.7V
额定电源电压
-
工作温度最小值
-40°C
产品范围
3V Parallel NOR Flash Memories
SVHC(高度关注物质)
No SVHC (25-Jun-2025)
存储密度
1Gbit
接口
CFI, 并行
针脚数
56引脚
存取时间
100ns
电源电压最大值
3.6V
芯片安装
表面安装
工作温度最高值
85°C
湿气敏感性等级
MSL 3 - 168小时
技术文档 (1)
法律与环境
原产地:
进行最后一道重要生产流程所在的地区原产地:Thailand
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地:Thailand
进行最后一道重要生产流程所在的地区
税则号:85423269
US ECCN:3A991.b.1.a
EU ECCN:NLR
RoHS 合规:是
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下载产品合规证书
产品合规证书
重量(千克):.051709
