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S29GL01GS11DHI020
闪存, 或非, 并行NOR, 1 Gbit, 64M x 16位, 并行口, FBGA, 64 引脚
图片仅用于图解说明，详见产品说明。
可订购
制造商标准交货时间：31 周
有货时请通知我
| 数量 | 价钱 (含税) |
|---|---|
| 1+ | CNY195.990 (CNY221.4687) |
| 10+ | CNY182.360 (CNY206.0668) |
| 25+ | CNY176.920 (CNY199.9196) |
| 50+ | CNY172.770 (CNY195.2301) |
| 100+ | CNY168.720 (CNY190.6536) |
包装规格：每个
最低: 1
多件: 1
CNY195.99 (CNY221.47 含税)
品項附註
此订单的信息已添加到您的订单确认邮件、发票和发货通知中。
产品概述
The S29GL01GS11DHI020 is a 1GB GL-S MirrorBit® Eclipse™ Flash Non-Volatile Memory fabricated on 65nm process technology. This device offers a fast page access time as fast as 110ns with a corresponding random access time as fast as 90ns. It features a write buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes the device ideal for todays eMBedded applications that require higher density, better performance and lower power consumption.
- Lowest address sector protected
- Versatile I/O™ - Wide I/O voltage range of 1.65V to VCC
- Asynchronous 32-byte page read
- Suspend and resume commands for program and erase operations
- Status register, data polling and ready/busy pin methods to determine device status
- Advanced sector protection - Volatile and non-volatile protection methods for each sector
- Common flash interface (CFI) parameter table
- 100000 Erase cycles for any sector typical
- 20 Years data retention typical
技术规格
闪存类型
并行NOR
记忆配置
64M x 16位
IC 外壳 / 封装
FBGA
时钟频率最大值
-
电源电压最小值
2.7V
额定电源电压
3V
工作温度最小值
-40°C
产品范围
3V Parallel NOR Flash Memories
SVHC(高度关注物质)
No SVHC (25-Jun-2025)
存储密度
1Gbit
接口
并行口
针脚数
64引脚
存取时间
110ns
电源电压最大值
3.6V
芯片安装
表面安装
工作温度最高值
85°C
湿气敏感性等级
MSL 3 - 168小时
技术文档 (1)
法律与环境
原产地：
进行最后一道重要生产流程所在的地区原产地：Thailand
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地：Thailand
进行最后一道重要生产流程所在的地区
税则号：85423269
US ECCN:3A991.b.2.a
EU ECCN:NLR
RoHS 合规：是
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
SVHC:No SVHC (25-Jun-2025)
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产品合规证书
重量（千克）：.008518