S29AL008J70TFN010

S29AL008J70TFN010 is a S29AL008J 8Mbit, 3.0 Volt-only flash memory organized as 1,048,576 bytes or 524,288 words. The word-wide data (x16) appears on DQ15–DQ0; the bytewide (x8) data appears on DQ7–DQ0. This device is designed to be programmed in-system with the standard system 3.0 volt VCC supply. A 12.0 V VPP or 5.0 VCC are not required for write or erase operations. The device can also be programmed in standard EPROM programmers. Device programming occurs by executing the program command sequence. This initiates the embedded program algorithm—an internal algorithm that automatically times the program pulse widths and verifies proper cell margin. The unlock bypass mode facilitates faster programming times by requiring only two write cycles to program data instead of four. The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors. The device is fully erased when shipped from the factory.

• Allowing host software to easily reconfigure for different flash devices
• Manufactured on 110nm process technology, fully compatible with 200nm S29AL008D
• May be programmed and locked at the factory or by the customer, flexible sector architecture
• A hardware method of locking a sector to prevent any program or erase operations within that sector
• Sectors can be locked in-system or via programming equipment
• Temporary sector unprotect feature allows code changes in previously locked sectors
• Reduces overall programming time when issuing multiple program command sequences
• Pinout and software compatible with single-power supply flash, superior inadvertent write protection
• 70ns access speed, thin small outline package (TSOP) standard pinout
• Extended temperature range from (-40°C to +125°C), 2.7-3.6V, top boot sector device (CFI support)