S25FL512SAGBHV210

S25FL512SAGBHV210 is a FL-S flash non-volatile memory using MIRRORBIT™ technology - that stores two data bits in each memory array transistor, eclipse architecture - that dramatically improves program and erase performance, 65-nm process lithography. This multiple width interface is called SPI multi-I/O or MIO. The Eclipse architecture features a page programming buffer that allows up to 128 words (256 bytes) or 256 words (512 bytes) to be programmed in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase algorithms. Executing code directly from flash memory is often called eXecute-in-Place (XIP). It t offers high densities coupled with the flexibility and fast performance required by a variety of embedded applications. It is ideal for code shadowing, XIP, and data storage.

• 512Mb density, 65nm mirrorbit process technology, 133MHz speed
• 24-ball BGA package type, temperature range from -40 to +105°C (industrial plus)
• EHPLC, 5 x 5 ball BGA footprint, CMOS 3.0V core with versatile I/O, SPI with multi-I/O
• SPI clock polarity and phase modes 0 and 3, uniform 256kB sectors
• Extended addressing is 32-bit address, READ commands
• Normal, fast, dual, quad, fast DDR, dual DDR, quad DDR
• Quad-input page programming (QPP) for slow clock systems
• Automatic ECC -internal hardware error correction code generation with single bit error correction
• 100000 program-erase cycles per sector, minimum cycling endurance
• 20 year data retention, minimum, OTP array of 1024bytes