IRS2301STRPBF
MOSFET驱动器, 高压侧与低压侧, 5V至20V电源, 350mA输出, 200ns延迟, NSOIC-8
需要更多？
| 包装类型 | 数量 | 单价 (不含增值税): | 合计 |
|---|---|---|---|
| 切割卷带 | 1 | CNY7.980 | CNY7.98 |
| 数量 | 价钱 (含税) |
|---|---|
| 1+ | CNY7.980 (CNY9.0174) |
| 10+ | CNY5.190 (CNY5.8647) |
| 100+ | CNY4.300 (CNY4.859) |
| 500+ | CNY4.130 (CNY4.6669) |
| 1000+ | CNY4.030 (CNY4.5539) |
| 2500+ | CNY3.860 (CNY4.3618) |
产品信息
产品概述
The IRS2301STRPBF from Infineon is a high and low side driver in 8 pin SOIC package. It is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. Ideally used at appliance motor drives, servo drives, micro inverter drives and general purpose three phase inverters.
- Floating channel designed for bootstrap operation
- Fully operational to +600V, undervoltage lockout for both channels
- Tolerant to negative transient voltage -dV/dt immune
- Gate drive supply range from 5V to 20V
- 3.3V, 5V and 15V input logic compatible
- Matched propagation delay for both channels
- Outputs in phase with inputs
- Lower di/dt gate driver for better noise immunity
- 220/200ns ton/off (typ) propagation delay
- 50ns delay matching
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技术规格
2放大器
高压侧和低压侧
8引脚
表面安装
200mA
5V
-40°C
220ns
-
MSL 2 - 1年
-
MOSFET
NSOIC
非反向
350mA
20V
125°C
200ns
-
No SVHC (25-Jun-2025)
技术文档 (1)
法律与环境
进行最后一道重要生产流程所在的地区原产地：Malaysia
进行最后一道重要生产流程所在的地区
RoHS
RoHS
产品合规证书