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| 数量 | 价钱 (含税) |
|---|---|
| 1+ | CNY14.260 (CNY16.1138) |
| 10+ | CNY9.640 (CNY10.8932) |
| 50+ | CNY9.240 (CNY10.4412) |
| 100+ | CNY8.840 (CNY9.9892) |
| 250+ | CNY8.740 (CNY9.8762) |
| 500+ | CNY8.620 (CNY9.7406) |
| 1000+ | CNY8.480 (CNY9.5824) |
| 2500+ | CNY8.050 (CNY9.0965) |
产品信息
IRS2108SPBF 的替代之选
找到 1 件产品
产品概述
The IRS2108SPBF is a high voltage high speed power MOSFET and IGBT Half-bridge Driver with dependent high- and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600V.
- Floating channel designed for bootstrap operation
- Tolerant to negative transient voltage (dV/dt immune)
- Under-voltage lockout for both channels
- 3.3, 5 and 15V Input logic compatible
- Cross-conduction prevention logic
- Matched propagation delay for both channels
- High-side output in phase with HIN input
- Low-side output out of phase with input
- Logic and power ground ±5V offset
- Lower di/dt gate driver for better noise immunity
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技术规格
2放大器
半桥
8引脚
表面安装
290mA
10V
-40°C
220ns
-
MSL 2 - 1年
-
IGBT, MOSFET
NSOIC
反相, 非反相
600mA
20V
125°C
200ns
-
No SVHC (25-Jun-2025)
法律与环境
进行最后一道重要生产流程所在的地区原产地:Thailand
进行最后一道重要生产流程所在的地区
RoHS
RoHS
产品合规证书
