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| 数量 | 价钱 (含税) |
|---|---|
| 1+ | CNY9.840 (CNY11.1192) |
| 10+ | CNY6.630 (CNY7.4919) |
| 50+ | CNY5.970 (CNY6.7461) |
| 100+ | CNY5.670 (CNY6.4071) |
| 250+ | CNY5.400 (CNY6.102) |
| 500+ | CNY5.190 (CNY5.8647) |
| 1000+ | CNY5.040 (CNY5.6952) |
| 2500+ | CNY4.960 (CNY5.6048) |
产品信息
IRS2001STRPBF 的替代之选
找到 1 件产品
产品概述
The IRS2001SPBF is a high voltage high speed power MOSFET and IGBT high and low Side Driver with independent high-side and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 200V.
- Floating channel designed for bootstrap operation
- Tolerant to negative transient voltage (dV/dt immune)
- Under-voltage lockout
- 3.3, 5 and 15V Logic compatible
- Matched propagation delay for both channels
- Outputs in phase with inputs
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技术规格
2放大器
高压侧和低压侧
8引脚
表面安装
290mA
10V
-40°C
160ns
-
MSL 2 - 1年
-
MOSFET
SOIC
非反向
600mA
20V
125°C
150ns
-
No SVHC (17-Jan-2023)
法律与环境
进行最后一道重要生产流程所在的地区原产地:Malaysia
进行最后一道重要生产流程所在的地区
RoHS
RoHS
产品合规证书
