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该库存量售罄后,将不再备货
| 数量 | 价钱 (含税) |
|---|---|
| 1+ | CNY24.300 (CNY27.459) |
| 10+ | CNY21.020 (CNY23.7526) |
| 25+ | CNY19.960 (CNY22.5548) |
| 50+ | CNY19.360 (CNY21.8768) |
| 100+ | CNY18.750 (CNY21.1875) |
| 250+ | CNY18.200 (CNY20.566) |
| 500+ | CNY17.140 (CNY19.3682) |
| 1000+ | CNY14.710 (CNY16.6223) |
包装规格:每个
最低: 1
多件: 1
CNY24.30 (CNY27.46 含税)
品項附註
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产品概述
IRS2001PBF is a high voltage, high speed power MOSFET and IGBT driver with independent high-side and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 200V.
- Floating channel designed for bootstrap operation
- Fully operational to +200V
- Tolerant to negative transient voltage, dV/dt immune
- Gate drive supply range from 10V to 20V
- Undervoltage lockout, matched propagation delay for both channels
- Outputs in phase with inputs
- Low-side output voltage is -0.3V (minimum)
- Turn-on propagation delay is 160ns (typ, VS = 0V, TA = 25°C)
- Offset supply leakage current is 50µA maximum, VIN = 0V or 5V, TA = 25°C)
- 8 lead PDIP, ambient temperature range from -40 to 125°C
技术规格
通道数
2放大器
驱动配置
高压侧和低压侧
针脚数
8引脚
芯片安装
通孔安装
拉电流
290mA
电源电压最小值
10V
工作温度最小值
-40°C
输入延迟
160ns
产品范围
-
湿气敏感性等级
-
栅极驱动器类型
-
电源开关类型
IGBT, MOSFET
IC 外壳 / 封装
DIP
输入类型
非反向
灌电流
600mA
电源电压最大值
20V
工作温度最高值
125°C
输出延迟
150ns
合规
-
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法律与环境
原产地:
进行最后一道重要生产流程所在的地区原产地:Malaysia
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地:Malaysia
进行最后一道重要生产流程所在的地区
税则号:85423990
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规:是
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
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产品合规证书
重量(千克):.000998

