IRLR2908TRPBF
功率场效应管, MOSFET, N通道, 80 V, 30 A, 0.028 ohm, TO-252AA, 表面安装
4,000 您现在可以预订货品了
| 包装类型 | 数量 | 单价 (不含增值税): | 合计 |
|---|---|---|---|
| 切割卷带 | 5 | CNY10.990 | CNY54.95 |
| 数量 | 价钱 (含税) |
|---|---|
| 5+ | CNY10.990 (CNY12.4187) |
| 50+ | CNY9.190 (CNY10.3847) |
| 100+ | CNY7.380 (CNY8.3394) |
| 500+ | CNY5.850 (CNY6.6105) |
| 1000+ | CNY5.350 (CNY6.0455) |
产品概述
The IRLR2908TRPBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this HEXFET® power MOSFET is a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. It is designed for surface-mounting using vapour phase, infrared or wave soldering techniques. Power dissipation level up to 1.5W is possible in typical surface-mount applications.
- Advanced process technology
- Ultra-low ON-resistance
- Dynamic dV/dt rating
- Repetitive avalanche allowed up to Tjmax
- Logic level
警告
该产品的市场需求较大, 导致交货时间延长, 交货日期可能会有延迟.
技术规格
N通道
30A
TO-252AA
10V
120W
175°C
-
No SVHC (25-Jun-2025)
80V
0.028ohm
表面安装
2.5V
3引脚
-
MSL 1 -无限制
法律与环境
进行最后一道重要生产流程所在的地区原产地：China
进行最后一道重要生产流程所在的地区
RoHS
RoHS
产品合规证书