IRF7389TRPBF
双路场效应管, MOSFET, 互补N与P沟道, 30 V, 30 V, 7.3 A, 7.3 A, 0.023 ohm
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| 包装类型 | 数量 | 单价 (不含增值税): | 合计 |
|---|---|---|---|
| 切割卷带 | 5 | CNY7.390 | CNY36.95 |
| 数量 | 价钱 (含税) |
|---|---|
| 5+ | CNY7.390 (CNY8.3507) |
| 50+ | CNY4.910 (CNY5.5483) |
| 250+ | CNY3.840 (CNY4.3392) |
| 1000+ | CNY3.500 (CNY3.955) |
| 2000+ | CNY3.220 (CNY3.6386) |
产品信息
产品概述
The IRF7389TRPBF is a HEXFET power MOSFET in 8 pin SOIC package. This dual N/P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.
- Generation V technology
- Ultra low ON-resistance
- Complimentary half bridge
- Fully avalanche rated
- 30V P channel and -30V N channel drain to source voltage
- 7.3A P channel and -5.3A N channel continues drain current
警告
该产品的市场需求较大, 导致交货时间延长, 交货日期可能会有延迟.
技术规格
互补N与P沟道
30V
7.3A
0.023ohm
8引脚
2.5W
-
MSL 1 -无限制
30V
7.3A
0.023ohm
SOIC
2.5W
150°C
-
No SVHC (25-Jun-2025)
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法律与环境
进行最后一道重要生产流程所在的地区原产地：Philippines
进行最后一道重要生产流程所在的地区
RoHS
RoHS
产品合规证书