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IRF3205ZLPBF
功率场效应管, MOSFET, N通道, 55 V, 110 A, 6500 µohm, TO-262, 通孔
已停产
产品信息
制造商INFINEON
制造商产品编号IRF3205ZLPBF复制
库存编号2579973
产品范围HEXFET Series
也称为SP001564660
技术数据表
通道类型N通道
漏源电压, Vds55V
电流, Id 连续110A
漏源接通状态电阻6500µohm
晶体管封装类型TO-262
晶体管安装通孔
Rds(on)测试电压10V
阈值栅源电压最大值4V
功率耗散170W
针脚数3引脚
工作温度最高值175°C
产品范围HEXFET Series
合规-
湿气敏感性等级MSL 1 -无限制
SVHC(高度关注物质)No SVHC (17-Jan-2023)
产品概述
IRF3205ZLPBF is a HEXFET® Power MOSFET that utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. This feature combines to make this design an extremely efficient and reliable device for use in a wide variety of applications.
- Ultra low on-resistance
- Fast switching, repetitive avalanche allowed up to Tjmax
- Drain-to-source breakdown voltage is 55V (min, VGS = 0V, ID = 250µA, TJ = 25°C)
- Static drain-to-source on-resistance is 4.9mohm (typ, VGS = 10V, ID = 66A, TJ = 25°C)
- Drain-to-source leakage current is 20µA (max, VDS = 55V, VGS = 0, TJ = 25°C)
- Gate-to-source charge is 21nC (typ, VDS = 44V, TJ = 25°C)
- Turn-on delay time is 18ns (typ, VDD = 28, TJ = 25°C)
- Fall time is 67ns (typ, VGS = 10V, TJ = 25°C)
- Reverse recovery time is 28ns (typ, TJ = 25°C, IF = 66A, VDD = 25V)
- TO-262 package, operating junction and storage temperature range from -55 to 175°C
技术规格
通道类型
N通道
电流, Id 连续
110A
晶体管封装类型
TO-262
Rds(on)测试电压
10V
功率耗散
170W
工作温度最高值
175°C
合规
-
SVHC(高度关注物质)
No SVHC (17-Jan-2023)
漏源电压, Vds
55V
漏源接通状态电阻
6500µohm
晶体管安装
通孔
阈值栅源电压最大值
4V
针脚数
3引脚
产品范围
HEXFET Series
湿气敏感性等级
MSL 1 -无限制
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法律与环境
原产地：
进行最后一道重要生产流程所在的地区原产地：Mexico
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地：Mexico
进行最后一道重要生产流程所在的地区
税则号：85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规：是
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
SVHC:No SVHC (17-Jan-2023)
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重量（千克）：.001225