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| 数量 | 价钱 (含税) |
|---|---|
| 1+ | CNY18.890 (CNY21.3457) |
| 10+ | CNY18.520 (CNY20.9276) |
| 50+ | CNY18.140 (CNY20.4982) |
| 100+ | CNY17.760 (CNY20.0688) |
| 250+ | CNY17.380 (CNY19.6394) |
| 500+ | CNY17.010 (CNY19.2213) |
| 1000+ | CNY16.630 (CNY18.7919) |
| 2500+ | CNY16.250 (CNY18.3625) |
产品概述
The IR2304PBF is a high voltage high speed power MOSFET and IGBT Half-Bridge Driver with independent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600V.
- Floating channel designed for bootstrap operation to 600V
- Tolerant to negative transient voltage (dV/dt immune)
- Under-voltage lockout for both channels
- 3.3, 5 and 15V Input logic input compatible
- Cross-conduction prevention logic
- Matched propagation delay for both channels
- Lower di/dt gate driver for better noise immunity
- Internal 100ns dead-time
- Output in phase with input
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技术规格
2放大器
高压侧和低压侧
8引脚
通孔安装
60mA
10V
-40°C
220ns
-
-
-
IGBT, MOSFET
DIP
非反向
130mA
20V
125°C
220ns
-
No SVHC (23-Jan-2024)
技术文档 (1)
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法律与环境
进行最后一道重要生产流程所在的地区原产地:Malaysia
进行最后一道重要生产流程所在的地区
RoHS
RoHS
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