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| 数量 | 价钱 (含税) |
|---|---|
| 1980+ | CNY34.680 (CNY39.1884) |
产品信息
产品概述
The IR2213SPBF is a high voltage high speed power MOSFET and IGBT Driver with independent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technology enables ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs and down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive a N-channel power MOSFET or IGBT in the high-side configuration which operates up to 1200V.
- Floating channel designed for bootstrap operation
- Tolerant to negative transient voltage
- DV/DT Immune
- Under-voltage lockout for both channels
- CMOS Schmitt-triggered inputs with pull-down
- Cycle-by-cycle edge-triggered shutdown logic
- Matched propagation delay for both channels
- Outputs in phase with inputs
- 3.3V Logic compatible
- Logic and power ground ±5V offset
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技术规格
2放大器
高压侧和低压侧
16引脚
表面安装
2A
12V
-
280ns
-
MSL 3 - 168小时
-
MOSFET
SOIC
非反向
2.5A
20V
125°C
225ns
-
No SVHC (25-Jun-2025)
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法律与环境
进行最后一道重要生产流程所在的地区原产地:Malaysia
进行最后一道重要生产流程所在的地区
RoHS
RoHS
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