
需要更多?
| 数量 | 价钱 (含税) |
|---|---|
| 1+ | CNY24.990 (CNY28.2387) |
| 10+ | CNY19.120 (CNY21.6056) |
| 25+ | CNY18.770 (CNY21.2101) |
| 50+ | CNY18.420 (CNY20.8146) |
| 100+ | CNY18.060 (CNY20.4078) |
| 250+ | CNY17.710 (CNY20.0123) |
| 500+ | CNY17.360 (CNY19.6168) |
| 1000+ | CNY17.020 (CNY19.2326) |
产品信息
产品概述
The IR2010SPBF is a high power high voltage high speed power MOSFET and IGBT Driver with independent high and low-side referenced output channels. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 200V. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction.
- Floating channel designed for bootstrap operation
- Tolerant to negative transient voltage (dV/dt immune)
- Under-voltage lockout for both channels
- 3.3V Logic compatible
- Logic and power ground ±5V offset
- CMOS Schmitt-triggered inputs with pull-down
- Shut down input turns OFF both channels
- Cross-conduction prevention logic
- Matched propagation delay for both channels
- Outputs in phase with inputs
技术规格
2放大器
高压侧和低压侧
16引脚
表面安装
3A
10V
-40°C
95ns
-
MSL 3 - 168小时
-
MOSFET
SOIC
非反向
3A
20V
125°C
65ns
-
No SVHC (25-Jun-2025)
相关产品
找到 1 件产品
法律与环境
进行最后一道重要生产流程所在的地区原产地:Malaysia
进行最后一道重要生产流程所在的地区
RoHS
RoHS
产品合规证书
