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IPP65R045C7XKSA1
功率场效应管, MOSFET, N通道, 650 V, 46 A, 0.045 ohm, TO-220, 通孔
796 有货
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796 件可于 5-6 个工作日内送达(英国 库存)
| 数量 | 价钱 (含税) |
|---|---|
| 1+ | CNY71.540 (CNY80.8402) |
| 5+ | CNY63.770 (CNY72.0601) |
| 10+ | CNY56.000 (CNY63.280) |
| 50+ | CNY51.330 (CNY58.0029) |
| 100+ | CNY46.660 (CNY52.7258) |
| 250+ | CNY45.730 (CNY51.6749) |
包装规格：每个
最低: 1
多件: 1
CNY71.54 (CNY80.84 含税)
品項附註
此订单的信息已添加到您的订单确认邮件、发票和发货通知中。
产品概述
The IPP65R045C7 is a 650V CoolMOS™ C7 N-channel Power MOSFET features lower gate charge. This CoolMOS™ is a revolutionary technology for high voltage power MOSFET, designed according to the super-junction(SJ) principle and pioneered by Infineon Technologies. The CoolMOS™ C7 combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits of fast switching super-junction MOSFETs offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.
- Revolutionary best-in-class RDS (ON)
- Reduced energy stored in output capacitance (EOSS)
- Space saving through use of smaller packages or reduction of parts
- Improved safety margin and suitable for both SMPS and Solar Inverter applications
- Lowest conduction losses
- Low switching losses
- Better light load efficiency
- Increasing power density
- Outstanding CoolMOS™ quality
技术规格
通道类型
N通道
电流, Id 连续
46A
晶体管封装类型
TO-220
Rds(on)测试电压
10V
功率耗散
227W
工作温度最高值
150°C
合规
-
SVHC(高度关注物质)
No SVHC (25-Jun-2025)
漏源电压, Vds
650V
漏源接通状态电阻
0.045ohm
晶体管安装
通孔
阈值栅源电压最大值
3.5V
针脚数
3引脚
产品范围
-
湿气敏感性等级
-
技术文档 (1)
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法律与环境
原产地：
进行最后一道重要生产流程所在的地区原产地：Malaysia
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地：Malaysia
进行最后一道重要生产流程所在的地区
税则号：85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规：是
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
SVHC:No SVHC (25-Jun-2025)
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产品合规证书
重量（千克）：.002008