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IPP320N20N3GXKSA1
功率场效应管, MOSFET, N通道, 200 V, 34 A, 0.032 ohm, TO-220, 通孔
2,279 有货
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10 件可于下一个工作日送达(Shanghai 库存)
2269 件可于 5-6 个工作日内送达(英国 库存)
| 数量 | 价钱 (含税) |
|---|---|
| 1+ | CNY27.040 (CNY30.5552) |
| 10+ | CNY22.320 (CNY25.2216) |
| 100+ | CNY18.660 (CNY21.0858) |
| 500+ | CNY15.000 (CNY16.950) |
| 1000+ | CNY11.340 (CNY12.8142) |
包装规格：每个
最低: 1
多件: 1
CNY27.04 (CNY30.56 含税)
品項附註
此订单的信息已添加到您的订单确认邮件、发票和发货通知中。
The IPP320N20N3 G is a N-channel Power MOSFET with performance leading OptiMOS™ benchmark technology. It is perfectly suited for synchronous rectification in 48V systems, DC-to-DC converters, uninterruptable power supplies (UPS) and inverters.
- Lowest Qg and Qgd
- World's lowest FOM, MSL 1 rated
- Highest efficiency
- Highest power density
- Lowest board space consumption
- Minimal device paralleling required
- Environmentally friendly
- Easy-to-design-in products
- Ideal for high-frequency switching and synchronous rectification
- Qualified according to JEDEC for target application
- Halogen-free, Green device
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
- 通道类型
N通道
电流, Id 连续34A
晶体管封装类型TO-220
Rds(on)测试电压10V
功率耗散136W
工作温度最高值175°C
合规-
SVHC(高度关注物质)No SVHC (25-Jun-2025)
漏源电压, Vds200V
漏源接通状态电阻0.032ohm
晶体管安装通孔
阈值栅源电压最大值3V
针脚数3引脚
产品范围-
湿气敏感性等级-
找到 6 件产品
- 原产地：
进行最后一道重要生产流程所在的地区原产地：Malaysia
进行最后一道重要生产流程所在的地区税则号：85412900US ECCN:EAR99EU ECCN:NLRRoHS 合规：是RoHS
RoHS 邻苯二甲酸盐合规:是RoHS
SVHC:No SVHC (25-Jun-2025)下载产品合规证书产品合规证书
重量（千克）：.001361