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IPP120N20NFDAKSA1
功率场效应管, MOSFET, N通道, 200 V, 84 A, 0.012 ohm, TO-220, 通孔
已停产
产品概述
The IPP120N20NFD is a N-channel Power MOSFET with improved hard commutation ruggedness. This new OptiMOS™ fast diode (FD), Infineon's latest generation of power MOSFET is optimized for body diode hard commutation. It is the perfect choice for hard switching applications.
- Industry's lowest RDS (ON), Qg and Qrr
- Halogen-free, Green device
- Highest system reliability
- Highest efficiency and power density
- Easy-to-design products
- Normal level
- Qualified according to JEDEC for target application
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技术规格
通道类型
N通道
电流, Id 连续
84A
晶体管封装类型
TO-220
Rds(on)测试电压
10V
功率耗散
300W
工作温度最高值
175°C
合规
-
SVHC(高度关注物质)
No SVHC (21-Jan-2025)
漏源电压, Vds
200V
漏源接通状态电阻
0.012ohm
晶体管安装
通孔
阈值栅源电压最大值
3V
针脚数
3引脚
产品范围
-
湿气敏感性等级
MSL 1 -无限制
法律与环境
原产地：
进行最后一道重要生产流程所在的地区原产地：Malaysia
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地：Malaysia
进行最后一道重要生产流程所在的地区
税则号：85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规：是
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
SVHC:No SVHC (21-Jan-2025)
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重量（千克）：.023587