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IPP034N03LGXKSA1 的替代之选
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产品概述
The IPP034N03L G is an OptiMOS™ N-channel Power MOSFET sets new standards in power density and energy efficiency. It is tailored to the needs of power management by improved EMI behaviour, as well as increased battery life. It is available in half-bridge configuration.
- Increased battery lifetime
- Improved EMI behaviour making external snubber networks obsolete
- Saving space
- Reducing power losses
- Optimized technology for DC-to-DC converters
- Qualified according to JEDEC for target applications
- Logic level
- Excellent gate charge x RDS (ON) product (FOM)
- Very low ON-resistance RDS (ON)
- Avalanche rated
- Halogen-free, Green device
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技术规格
通道类型
N通道
电流, Id 连续
80A
晶体管封装类型
TO-220
Rds(on)测试电压
10V
功率耗散
94W
工作温度最高值
175°C
合规
-
SVHC(高度关注物质)
No SVHC (23-Jan-2024)
漏源电压, Vds
30V
漏源接通状态电阻
3400µohm
晶体管安装
通孔
阈值栅源电压最大值
1V
针脚数
3引脚
产品范围
-
湿气敏感性等级
-
法律与环境
原产地:
进行最后一道重要生产流程所在的地区原产地:Malaysia
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地:Malaysia
进行最后一道重要生产流程所在的地区
税则号:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规:是
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
SVHC:No SVHC (23-Jan-2024)
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产品合规证书
重量(千克):.004536

