IPD65R225C7ATMA1

The IPD65R225C7 is a 650V CoolMOS™ C7 N-channel Power MOSFET features lower gate charge. The CoolMOS™ is a revolutionary technology for high voltage power MOSFET, designed according to the super-junction(SJ) principle and pioneered by Infineon Technologies. The CoolMOS™ C7 combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits of fast switching super-junction MOSFET offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.

• Increased dV/dt ruggedness
• Better efficiency due to best in class FOM RDS (ON) x Eoss and RDS (ON) x Qg
• Best in class RDS (ON)
• Easy to use/drive
• Halogen-free
• Enabling higher system efficiency
• Enabling higher frequency
• Increased power density solutions
• Size savings due to reduced cooling requirements
• Higher system reliability due to lower operating temperatures
• Reduced energy stored in output capacitance(Eoss)
• Low switching losses
• Outstanding CoolMOS™ quality

警告

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.

注释

For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended.