IPB64N25S320ATMA1

IPB64N25S320ATMA1 is a OptiMOS®-T power-transistor. Potential application includes hybrid inverter, DC/DC, piezo injection.

• N-channel - enhancement mode, AEC qualified, robust packages with superior quality and reliability
• 100% Avalanche tested, optimized total gate charge enables smaller driver output stages
• Drain-source breakdown voltage is 250V min (VGS=0V, ID= 1mA, Tj = 25°C)
• Drain-source on-state resistance is 20mohm max (VGS=10V, ID=64A, Tj = 25°C)
• Continuous drain current is 64A max (TC=25°C, VGS = 10V), power dissipation is 300W
• Gate threshold voltage range from 2.0 to 4.0V (VDS=V GS, ID=270µA, Tj = 25°C)
• Low switching and conduction power losses for high thermal efficiency
• Rise time is 20ns typ (VDD=100V, VGS=10V, ID=25A, RG=1.6ohm, Tj = 25°C)
• Fall time is 12ns typ (VDD=100V, VGS=10V, ID=25A, RG=1.6ohm, Tj = 25°C)
• PG-TO263-3-2 package, operating temperature range from -55 to +175°C

警告

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.