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产品概述
The IPA60R099C6 is a N-channel power MOSFET with 650VDS drain source voltage. CoolMOS™ C6 combines Infineon's experience as the leading Superjunction MOSFET supplier with Best-in-Class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler.
- Easy control of switching behaviour
- Extremely low losses due to very low Figure of Merit (RDS (ON) x Qg and Eoss)
- Very high commutation ruggedness
- Easy to use
- Better light load efficiency compared to C3
- Outstanding reliability with proven CoolMOS™ quality combined with high body diode ruggedness
- Better performance in comparison to previous CoolMOS™ generations
- More efficient, more compact, lighter and cooler
- Improved power density
- Improved reliability
- Better light load efficiency
- General purpose part can be used in both soft and hard switching topologies
- Improved efficiency in hard switching applications
- Reduces possible ringing due to PCB layout and package parasitic effects
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技术规格
通道类型
N通道
电流, Id 连续
37.9A
晶体管封装类型
TO-220FP
Rds(on)测试电压
10V
功率耗散
35W
工作温度最高值
150°C
合规
-
漏源电压, Vds
600V
漏源接通状态电阻
0.099ohm
晶体管安装
通孔
阈值栅源电压最大值
3V
针脚数
3引脚
产品范围
-
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法律与环境
原产地:
进行最后一道重要生产流程所在的地区原产地:Malaysia
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地:Malaysia
进行最后一道重要生产流程所在的地区
税则号:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规:是
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
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重量(千克):.003184

