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IMDQ75R007M2HXTMA1
碳化硅MOSFET, 单, N通道, 222 A, 750 V, 6100 µohm, HDSOP
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| 数量 | 价钱 (含税) |
|---|---|
| 1+ | CNY244.960 (CNY276.8048) |
| 5+ | CNY212.350 (CNY239.9555) |
| 10+ | CNY179.730 (CNY203.0949) |
| 50+ | CNY178.160 (CNY201.3208) |
| 100+ | CNY176.580 (CNY199.5354) |
包装规格：单件（切割供应）
最低: 1
多件: 1
CNY244.96 (CNY276.80 含税)
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产品信息
制造商INFINEON
制造商产品编号IMDQ75R007M2HXTMA1复制
库存编号4733915
产品范围CoolSiC G2 Series
技术数据表
MOSFET模块配置单
通道类型N通道
电流, Id 连续222A
漏源电压, Vds750V
漏源接通状态电阻6100µohm
晶体管封装类型HDSOP
针脚数22引脚
Rds(on)测试电压20V
阈值栅源电压最大值5.6V
功率耗散789W
工作温度最高值175°C
产品范围CoolSiC G2 Series
SVHC(高度关注物质)No SVHC (25-Jun-2025)
产品概述
IMDQ75R007M2HXTMA1 is a CoolSiC™ MOSFET 750V Generation 2 (G2) in Q-DPAK package. It offers improved switching performance, reduced losses, and enhanced thermal management. With a 25% increase in switching speed and up to 35% improved Figure-of-Merits compared to Generation 1 (G1), it enables more efficient, compact, and reliable systems for industrial applications. The ultra-low RDS(on) value of 7mohm makes it ideal for static switching applications like eFuse and solid-state circuit breakers.
- 6.8mohm RDs(on) typical
- Highly robust 750V technology, 100% avalanche tested
- Enhanced robustness and reliability for bus voltages beyond 500V
- Superior efficiency in hard switching
- Higher switching frequency in soft switching topologies
- Robustness against parasitic turn on for unipolar gate driving
- Best‑in‑class thermal dissipation
- Reduced switching losses through improved gate control
技术规格
MOSFET模块配置
单
电流, Id 连续
222A
漏源接通状态电阻
6100µohm
针脚数
22引脚
阈值栅源电压最大值
5.6V
工作温度最高值
175°C
SVHC(高度关注物质)
No SVHC (25-Jun-2025)
通道类型
N通道
漏源电压, Vds
750V
晶体管封装类型
HDSOP
Rds(on)测试电压
20V
功率耗散
789W
产品范围
CoolSiC G2 Series
技术文档 (1)
法律与环境
原产地：
进行最后一道重要生产流程所在的地区原产地：Malaysia
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地：Malaysia
进行最后一道重要生产流程所在的地区
税则号：85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规：是
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
SVHC:No SVHC (25-Jun-2025)
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产品合规证书
重量（千克）：.000001