IDDD08G65C6XTMA1
二极管, 碳化硅肖特基, CoolSiC 6G 650V, 单, 650 V, 24 A, 12.2 nC, HDSOP
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| 包装类型 | 数量 | 单价 (不含增值税): | 合计 |
|---|---|---|---|
| 切割卷带 | 1 | CNY31.100 | CNY31.10 |
| 数量 | 价钱 (含税) |
|---|---|
| 1+ | CNY31.100 (CNY35.143) |
| 10+ | CNY20.550 (CNY23.2215) |
| 100+ | CNY14.510 (CNY16.3963) |
| 500+ | CNY12.980 (CNY14.6674) |
| 1000+ | CNY12.090 (CNY13.6617) |
产品信息
产品概述
The CoolSiC™ generation G6 is the leading edge technology from Infineon for the SiC Schottky barrier diodes. The G6 is an advancement of Infineon's G5 technology with the introduction of a novel Schottky metal system. The CoolSiC™ Schottky diode G6 has been designed to complement our 600V and 650V CoolMOS™ 7 families, meeting the most stringent application requirements in this voltage range. Offering key benefits such as System cost and size savings due to the reduced cooling requirements as well as enabling higher frequency and increased power density.
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技术规格
CoolSiC 6G 650V
650V
12.2nC
10引脚
表面安装
No SVHC (25-Jun-2025)
单
24A
HDSOP
175°C
-
技术文档 (1)
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法律与环境
进行最后一道重要生产流程所在的地区原产地：Malaysia
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RoHS
RoHS
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