CY7C1041GN30-10BVJXI

CY7C1041GN30-10BVJXI is a CY7C1041GN high-performance CMOS fast static RAM organized as 256K words by 16-bits. Data writes are performed by asserting the chip enable active-low (CE) and write enable active-low (WE) inputs LOW, while providing the data on I/O0 through I/O15 and address on A0 through A17 pins. The byte high enable active-low (BHE) and byte low enable active-low (BLE) inputs control write operations to the upper and lower bytes of the specified memory location. Active-low BHE controls I/O8 through I/O15 and active-low BLE controls I/O0 through I/O7. Data reads are performed by asserting the chip enable active-low (CE) and output enable active-low (OE) inputs LOW and providing the required address on the address lines. Read data is accessible on the I/O lines (I/O0 through I/O15). Byte accesses can be performed by asserting the required byte enable signal active-low (BHE or BLE) to read either the upper byte or the lower byte of data from the specified address location.

• High speed, tAA = 10ns
• Low active and standby currents, active current: ICC = 38mA typical
• 1.0-V data retention, TTL-compatible inputs and outputs
• 2.2V–3.6V voltage range
• 48-ball VFBGA package, JEDEC compatible
• 4Mbit density, × 16-bits data width
• 65nm process technology
• Industrial operating temperature range from –40°C to +85°C