CY62177EV18LL-70BAXI

CY62177EV18LL-70BAXI is a CY62177EV18 MoBL® high-performance CMOS static RAM organized as 2 M words by 16 bits and 4 M words by 8 bits. This device features advanced circuit design to provide ultra low active current. It is ideal for providing More Battery Life™ (MoBL®) in portable applications, such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 99 percent when addresses are not toggling. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output pins (I/O0 through I/O15) are placed in a high impedance state when: deselected (CE1 HIGH or CE2 LOW), outputs are disabled (OE HIGH), both byte high enable and byte low enable are disabled (BHE, BLE HIGH), or during a write operation (CE1 LOW, CE2 HIGH and WE LOW).

• Very high speed is 70ns
• Wide voltage range from 1.65V to 2.25V
• Ultra low standby power, typical standby current: 3μA
• Ultra low active power, typical active current: 4.5mA at f = 1MHz
• Easy memory expansion with active-low CE1, CE2, and active-low OE features
• Automatic power-down when deselected
• Complementary metal oxide semiconductor (CMOS) for optimum speed and power
• 48 ball FBGA package
• Industrial ambient temperature range from –40°C to +85°C
• Voltage range from 1.65V to 2.25V (VCC)