CY15E016Q-SXE

CY15E016Q-SXE is a CY15E016Q 16Kbit non-volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is non-volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 121 years while eliminating the complexities, overhead, and system level reliability problems caused by serial flash, EEPROM, and other non-volatile memories. It performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other non-volatile memories. It provides substantial benefits to users of serial EEPROM or flash as a hardware drop-in replacement. This uses the high-speed SPI bus, which enhances the high-speed write capability of F-RAM technology.

• 16Kbit ferroelectric random access memory (F-RAM) logically organized as 2K × 8
• NoDelay™ writes, advanced high-reliability ferroelectric process
• Up to 16MHz frequency, direct hardware replacement for serial flash and EEPROM
• Sophisticated write protection scheme, hardware protection using the active-low write protect WP pin
• Software protection using write disable instruction
• Low power consumption, 300μA active current at 1MHz
• Voltage operation: VDD = 4.5V to 5.5V, AEC Q100 grade 1 compliant
• Automotive-E temperature range from –40°C to +125°C
• 8-pin SOIC package