CY15E004Q-SXE

CY15E004Q-SXE is a CY15E004Q 4Kbit non-volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is non-volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 121 years while eliminating the complexities, overhead, and system level reliability problems caused by serial flash, EEPROM and other non-volatile memories. It is ideal for non-volatile memory applications requiring frequent or rapid writes. Examples range from data collection, where the number of write cycles may be critical, to demanding industrial controls where the long write time of serial flash or EEPROM can cause data loss. It provides substantial benefits to users of serial EEPROM or flash as a hardware drop-in replacement. This uses the high-speed SPI bus, which enhances the high-speed write capability of F-RAM technology.

• 4Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8
• NoDelay™ writes, advanced high-reliability ferroelectric process
• Very fast serial peripheral interface (SPI), up to 16MHz frequency
• Direct hardware replacement for serial flash and EEPROM, supports SPI mode 0 (0, 0), mode 3 (1, 1)
• Sophisticated write protection scheme, hardware protection using the write protect active-low WP pin
• Software protection using write disable instruction
• Low power consumption, 300µA active current at 1MHz, 10µA (typ) standby current at +85°C
• Voltage operation VDD = 4.5V to 5.5V, automotive-E temperature range from –40°C to +125°C
• AEC Q100 grade 1 compliant
• 8-pin SOIC package