CY15B102QN-50SXE

CY15B102QN-50SXE is a CY15B102QN EXCELON™ Auto automotive grade, 2Mb nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 121 years while eliminating the complexities, overhead, and system-level reliability problems caused by serial flash, EEPROM, and other nonvolatile memories. This performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared to other nonvolatile memories. This is capable of supporting 10^13 read/write cycles, or 10 million times more write cycles than EEPROM.

• 2Mb ferroelectric random access memory (F-RAM) logically organized as 256K × 8
• Advanced high-reliability ferroelectric process, fast serial peripheral interface (SPI)
• Up to 50MHz frequency, supports SPI mode 0 (0, 0) and mode 3 (1, 1)
• Sophisticated write protection scheme, hardware protection using write protect active-low WP pin
• Software protection using write disable (WRDI) instruction
• Dedicated special sector write and read
• Low-power consumption, 3.7mA (typ) active current at 40MHz, 2.7µA (typ) standby current
• Low-voltage operation:VDD = 1.8V to 3.6V
• Automotive operating temperature range from –40°C to +125°C, no inrush current control
• AEC-Q100 grade 1 compliant, 8-pin SOIC (EIAJ) package