需要更多?
| 数量 | 价钱 (含税) |
|---|---|
| 1+ | CNY170.990 (CNY193.2187) |
| 10+ | CNY158.530 (CNY179.1389) |
| 25+ | CNY153.570 (CNY173.5341) |
| 50+ | CNY149.890 (CNY169.3757) |
| 100+ | CNY147.490 (CNY166.6637) |
产品信息
产品概述
CY14B256LA-ZS25XI is a fast static RAM, with a non-volatile element in each memory cell. The memory is organized as 32 K bytes of 8 bits each. The embedded non-volatile elements incorporate QuantumTrap technology, producing the world’s most reliable non-volatile memory. The SRAM provides infinite read and write cycles, while independent non-volatile data resides in the highly reliable QuantumTrap cell. Data transfers from the SRAM to the non-volatile elements (the STORE operation) take place automatically at power-down. On power-up, data is restored to the SRAM (the RECALL operation) from the non-volatile memory. Both the STORE and RECALL operations are also available under software control.
- 3.0V voltage, 256Kb density, × 8 data bus, 1st Rev die revision blank – No Rev, 25ns speed
- Hands off automatic STORE on power-down with only a small capacitor
- STORE to QuantumTrap non-volatile elements initiated by software, device pin, AutoStore on power-down
- RECALL to SRAM initiated by software or power-up, infinite read, write, and recall cycles
- 1 million STORE cycles to QuantumTrap, 20-year min data retention
- Power supply range from 2.7 to 3.6V, non-volatile STORE operations is 1,000K min
- Storage capacitor is 68μF typ (Between VCAP pin and VSS)
- Average VCC current is 70mA max (tRC = 25ns)
- VCC standby current is 5mA max (active low. CE > (VCC – 0.2 V))
- 44-pin TSOP II package, industrial temperature range from -40 to 85°C
技术规格
256Kbit
25ns
2.7V
TSOP
并行口
-40°C
-
No SVHC (25-Jun-2025)
32K x 8位
25ns
3.6V
44引脚
表面安装
85°C
MSL 3 - 168小时
技术文档 (1)
法律与环境
进行最后一道重要生产流程所在的地区原产地:United States
进行最后一道重要生产流程所在的地区
RoHS
RoHS
产品合规证书

