BTS3256DAUMA1

BTS3256DAUMA1 is a single-channel low-side power switch providing embedded protective functions. This HITFET™ is designed for automotive and industrial applications with outstanding protection and control features. The power transistor is an N-channel vertical power MOSFET. This device is controlled by a chip in smart power technology. This device is able to switch all kind of resistive, inductive, and capacitive loads. The ESD protection of the VS and IN/Fault pin is referenced to GND. The BTS3256D is supplied by the VS Pin. This pin should be connected to a reverse protected battery line. The supply voltage is monitored by the under voltage lock out circuit. Potential application includes all types of resistive, inductive and capacitive loads. Also suitable for loads with inrush current, EMC optimized switching, higher speed PWM controlled loads, micro controller compatible low side power switch. Also used as replacement of electromechanical relays, fuses and discrete circuits.

• Slew rate control by dedicated pin enabling EMC-optimized switching or PWM operation
• Clear detection of digital fault signal also during fast PWM operation due to restart delay time
• Thermal and overload protection with time controlled auto restart behaviour
• Time and power limited active current limitation, electrostatic discharge protection (ESD)
• Very low leakage current, operating voltage range from 5.5V to 30V
• On-state resistance is 10mohm typical at (TJ = 25°C; ID = 20A; VIN = high, VS = 10V)
• Nominal load current is 8.7A typical at (TJ < 150°C; TA 85°C SMD²);VIN = high's ≥ 10V;VDS = 0.5V))
• Standby supply current is 3µA typical at (TJ = 85°C;VD = 13.5V;VIN = low)
• Off state drain current is 6µA typical at (VD = 32V;VIN = low), AEC-Q100 qualified
• Junction temperature range from -40°C to 150°C, TO-252-5 package