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1ED2127S65FXUMA1
栅极驱动器, 1 放大器, 非隔离, 高压侧, IGBT, SiC MOSFET, 8 引脚, SOIC
2,488 有货
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2,488 件可于 5-6 个工作日内送达(英国 库存)
| 数量 | 价钱 (含税) |
|---|---|
| 1+ | CNY11.050 (CNY12.4865) |
| 10+ | CNY7.330 (CNY8.2829) |
| 50+ | CNY6.920 (CNY7.8196) |
| 100+ | CNY6.500 (CNY7.345) |
| 250+ | CNY6.110 (CNY6.9043) |
| 500+ | CNY5.870 (CNY6.6331) |
| 1000+ | CNY5.710 (CNY6.4523) |
| 2500+ | CNY5.400 (CNY6.102) |
包装规格：每个
最低: 1
多件: 1
CNY11.05 (CNY12.49 含税)
品項附註
此订单的信息已添加到您的订单确认邮件、发票和发货通知中。
产品概述
1ED2127S65FXUMA1 is a 1ED21x7x family 650V high-side gate driver with overcurrent protection (OCP), multi-function RCIN/Fault/Enable (RFE) and integrated bootstrap diode (BSD). The over-current protection and under-voltage lockout circuit detects over-current / under-voltage in the driven power transistor and terminates the gate drive voltage. An open-drain FAULT signal is provided to indicate that an over-current shutdown has occurred. Potential applications include motor drives, general purpose inverters, Forklift, and light electric vehicles.
- Infineon thin-film-SOI-technology
- Integrated ultra-fast, low RDS(ON) bootstrap diode
- Negative VS transient immunity of 100V
- Detection of overcurrent and under voltage supply
- Multi-function RCIN/fault/enable (RFE) with programmable fault clear time
- High-side floating well supply offset voltage is 650V max at TA =25°C
- VCC quiescent supply current is 400µA max at (VCC– COM) = (VB – VS) = 15V and TA = 25°C
- IGBT / SiC MOSFET target transistor
- PG-DSO-8 package
- Ambient temperature range from -40 to 125°C
技术规格
通道数
1放大器
驱动配置
高压侧
针脚数
8引脚
芯片安装
表面安装
拉电流
4A
电源电压最小值
9.2V
工作温度最小值
-40°C
输入延迟
55ns
产品范围
-
SVHC(高度关注物质)
No SVHC (25-Jun-2025)
栅极驱动器类型
非隔离
电源开关类型
IGBT, SiC MOSFET
IC 外壳 / 封装
SOIC
输入类型
逻辑器件
灌电流
-4A
电源电压最大值
22V
工作温度最高值
125°C
输出延迟
55ns
合规
-
技术文档 (1)
法律与环境
原产地：
进行最后一道重要生产流程所在的地区原产地：Thailand
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地：Thailand
进行最后一道重要生产流程所在的地区
税则号：85423990
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规：是
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
SVHC:No SVHC (25-Jun-2025)
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产品合规证书
重量（千克）：.000001