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1ED21271S65FXUMA1
栅极驱动器, 1 放大器, 非隔离, 高压侧, Si MOSFET, 8 引脚, SOIC
2,500 有货
需要更多？
2,500 件可于 5-6 个工作日内送达(英国 库存)
| 数量 | 价钱 (含税) |
|---|---|
| 1+ | CNY11.430 (CNY12.9159) |
| 10+ | CNY7.570 (CNY8.5541) |
| 50+ | CNY7.140 (CNY8.0682) |
| 100+ | CNY6.710 (CNY7.5823) |
| 250+ | CNY6.310 (CNY7.1303) |
| 500+ | CNY6.070 (CNY6.8591) |
| 1000+ | CNY6.000 (CNY6.780) |
| 2500+ | CNY5.610 (CNY6.3393) |
包装规格：每个
最低: 1
多件: 1
CNY11.43 (CNY12.92 含税)
品項附註
此订单的信息已添加到您的订单确认邮件、发票和发货通知中。
产品概述
1ED21271S65FXUMA1 is a 1ED21x7x family 650V high-side gate driver with overcurrent protection (OCP), multi-function RCIN/Fault/Enable (RFE) and integrated bootstrap diode (BSD). The over-current protection and under-voltage lockout circuit detects over-current / under-voltage in the driven power transistor and terminates the gate drive voltage. An open-drain FAULT signal is provided to indicate that an over-current shutdown has occurred. Potential applications include motor drives, general purpose inverters, Forklift, and light electric vehicles.
- Infineon thin-film-SOI-technology
- Integrated ultra-fast, low RDS(ON) bootstrap diode
- Negative VS transient immunity of 100V
- Detection of overcurrent and under voltage supply
- Multi-function RCIN/fault/enable (RFE) with programmable fault clear time
- High-side floating well supply offset voltage is 650V max at TA =25°C
- VCC quiescent supply current is 400µA max at (VCC– COM) = (VB – VS) = 15V and TA = 25°C
- Si MOSFET target transistor
- PG-DSO-8 package
- Ambient temperature range from -40 to 125°C
技术规格
通道数
1放大器
驱动配置
高压侧
针脚数
8引脚
芯片安装
表面安装
拉电流
4A
电源电压最小值
6.6V
工作温度最小值
-40°C
输入延迟
55ns
产品范围
-
SVHC(高度关注物质)
No SVHC (25-Jun-2025)
栅极驱动器类型
非隔离
电源开关类型
Si MOSFET
IC 外壳 / 封装
SOIC
输入类型
逻辑器件
灌电流
-4A
电源电压最大值
22V
工作温度最高值
125°C
输出延迟
55ns
合规
-
技术文档 (1)
法律与环境
原产地：
进行最后一道重要生产流程所在的地区原产地：Thailand
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地：Thailand
进行最后一道重要生产流程所在的地区
税则号：85423990
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规：是
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
SVHC:No SVHC (25-Jun-2025)
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重量（千克）：.000001