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XP2530AGY
Dual MOSFET, N and P Channel, 30 V, 30 V, 3.3 A, 2.3 A, 0.072 ohm
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No Longer Stocked
Product Information
ManufacturerYAGEO XSEMI
Manufacturer Part NoXP2530AGYCopy
Order Code4169023
Technical Datasheet
Channel TypeN and P Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel3.3A
Continuous Drain Current Id P Channel2.3A
Drain Source On State Resistance N Channel0.072ohm
Drain Source On State Resistance P Channel0.15ohm
Transistor Case StyleSOT-26
No. of Pins6Pins
Power Dissipation N Channel1.136W
Power Dissipation P Channel1.136W
Operating Temperature Max150°C
Product Range-
Qualification-
Technical Specifications
Channel Type
N and P Channel
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id P Channel
2.3A
Drain Source On State Resistance P Channel
0.15ohm
No. of Pins
6Pins
Power Dissipation P Channel
1.136W
Product Range
-
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id N Channel
3.3A
Drain Source On State Resistance N Channel
0.072ohm
Transistor Case Style
SOT-26
Power Dissipation N Channel
1.136W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001