Print Page
SUD50P08-25L-E3
Power MOSFET, P Channel, 80 V, 50 A, 0.0252 ohm, TO-252 (DPAK), Surface Mount
10,246 In Stock
16,000 more incoming. You can reserve stock now
10,246 Delivery in 5-6 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | CNY16.120 | CNY80.60 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY16.120 (CNY18.2156) |
| 50+ | CNY14.470 (CNY16.3511) |
| 100+ | CNY12.820 (CNY14.4866) |
| 500+ | CNY10.810 (CNY12.2153) |
| 1000+ | CNY10.640 (CNY12.0232) |
Full Reel
| Quantity | Price (inc GST) |
|---|---|
| 2000+ | CNY9.380 (CNY10.5994) |
| 6000+ | CNY9.360 (CNY10.5768) |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSUD50P08-25L-E3Copy
Order Code
Full Reel2679718
Re-Reel2646408RL
Cut Tape2646408
Product RangeTrenchFET
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id50A
Drain Source On State Resistance0.0252ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation136W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeTrenchFET
Qualification-
SVHCLead (04-Feb-2026)
Product Overview
SUD50P08-25L-E3 is a P-channel 80-V (D-S) 175°C MOSFET.
- TrenchFET® power MOSFET
- Drain-source breakdown voltage is -80V min at VGS = 0V, ID = - 250µA, TJ = 25°C
- Zero gate voltage drain current is -1µA max at VDS = -80V, VGS = 0V, TJ = 25°C
- Drain-source on-state resistance is 0.021ohm typ at VGS = -10V, ID = -12.5A, TJ = 25°C
- Continuous source-drain diode current is -50A max at TC = 25°C
- Body diode reverse recovery charge is 110nC typ at IF = -10.5A, di/dt = 100A/µs, TJ = 25°C
- Gate resistance is 4ohm typ at f = 1MHz
- Reverse recovery fall time is 37ns typ at IF = -10.5A, di/dt = 100A/µs, TJ = 25°C
- Reverse recovery rise time is 18ns typ at IF = -10.5A, di/dt = 100A/µs, TJ = 25°C
- Operating junction and storage temperature range from -55 to 175°C
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
50A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
136W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (04-Feb-2026)
Drain Source Voltage Vds
80V
Drain Source On State Resistance
0.0252ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
TrenchFET
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Israel
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Israel
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000426