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SQJQ141EL-T1_GE3
Power MOSFET, P Channel, 40 V, 390 A, 2000 µohm, PowerPAK, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSQJQ141EL-T1_GE3Copy
Order Code
Re-Reel3777512RL
Cut Tape3777512
Your Part Number
2,442 In Stock
12,000 more incoming. You can reserve stock now
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | CNY35.100 | CNY35.10 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY35.100 (CNY39.663) |
| 10+ | CNY23.160 (CNY26.1708) |
| 100+ | CNY16.370 (CNY18.4981) |
| 500+ | CNY14.050 (CNY15.8765) |
| 1000+ | CNY13.770 (CNY15.5601) |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSQJQ141EL-T1_GE3Copy
Order Code
Re-Reel3777512RL
Cut Tape3777512
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id390A
Drain Source On State Resistance2000µohm
Transistor Case StylePowerPAK
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation600W
No. of Pins4Pins
Operating Temperature Max175°C
Product Range-
QualificationAEC-Q101
SVHCNo SVHC (25-Jun-2025)
Product Overview
SQJQ141EL-T1_GE3 is an automotive P-channel MOSFET.
- AEC-Q101 qualified
- 100% Rg and UIS tested
- Very low thermal resistance
- Drain-source breakdown voltage is -40V min at VGS = 0, ID = 250μA, TC = 25°C
- Gate-source leakage is ±100nA max at VDS = 0V, VGS = ±20V, TC = 25°C
- On-state drain current is -100A min at VDS ≥ -5V, VGS = -10V, TC = 25°C
- Drain-source on-state resistance is 0.002 ohm typ at ID = 8A, VGS = -4.5V,TC = 25°C
- Forward voltage is -0.8V typ at IF = -50A, VGS = 0, TC = 25°C
- PowerPAK 8 x 8L package
- Operating junction and storage temperature range from -55 to +175°C
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
390A
Transistor Case Style
PowerPAK
Rds(on) Test Voltage
10V
Power Dissipation
600W
Operating Temperature Max
175°C
Qualification
AEC-Q101
Drain Source Voltage Vds
40V
Drain Source On State Resistance
2000µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
No. of Pins
4Pins
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001