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SQD50N06-07L-GE3
Power MOSFET, N Channel, 60 V, 50 A, 7600 µohm, TO-252 (DPAK), Surface Mount
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No Longer Manufactured
Product Information
ManufacturerVISHAY
Manufacturer Part NoSQD50N06-07L-GE3Copy
Order Code1869918
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id50A
Drain Source On State Resistance7600µohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation136W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
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Product Overview
The SQD50N06-07L-GE3 is a 60VDS TrenchFET® N-channel enhancement-mode Power MOSFET with antiparallel diode.
- 100% Rg tested
- 100% UIS tested
- AEC-Q101 qualified
- Package with low thermal resistance
- Halogen-free
- -55 to 175°C Operating temperature range
Applications
Industrial, Power Management, Automotive
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
50A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
136W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
60V
Drain Source On State Resistance
7600µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (1)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0003