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SQ1922AEEH-T1_GE3
Dual MOSFET, N Channel, 20 V, 20 V, 850 mA, 850 mA, 0.21 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSQ1922AEEH-T1_GE3Copy
Order Code
Re-Reel3104164RL
Cut Tape3104164
Product RangeTrenchFET Series
Your Part Number
4,975 In Stock
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2,811 Delivery in 3-4 Business Days(SG stock)
2,164 Delivery in 5-6 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | CNY5.950 | CNY29.75 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY5.950 (CNY6.7235) |
| 10+ | CNY3.700 (CNY4.181) |
| 100+ | CNY2.390 (CNY2.7007) |
| 500+ | CNY1.820 (CNY2.0566) |
| 1000+ | CNY1.400 (CNY1.582) |
| 5000+ | CNY1.160 (CNY1.3108) |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSQ1922AEEH-T1_GE3Copy
Order Code
Re-Reel3104164RL
Cut Tape3104164
Product RangeTrenchFET Series
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id N Channel850mA
Continuous Drain Current Id P Channel850mA
Drain Source On State Resistance N Channel0.21ohm
Drain Source On State Resistance P Channel0.21ohm
Transistor Case StyleSOT-363
No. of Pins6Pins
Power Dissipation N Channel1.5W
Power Dissipation P Channel1.5W
Operating Temperature Max175°C
Product RangeTrenchFET Series
QualificationAEC-Q101
SVHCLead (07-Nov-2024)
Product Overview
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id P Channel
850mA
Drain Source On State Resistance P Channel
0.21ohm
No. of Pins
6Pins
Power Dissipation P Channel
1.5W
Product Range
TrenchFET Series
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
20V
Continuous Drain Current Id N Channel
850mA
Drain Source On State Resistance N Channel
0.21ohm
Transistor Case Style
SOT-363
Power Dissipation N Channel
1.5W
Operating Temperature Max
175°C
Qualification
AEC-Q101
SVHC
Lead (07-Nov-2024)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.009