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SISF20DN-T1-GE3
Dual MOSFET, N Channel, 60 V, 60 V, 52 A, 52 A, 0.01 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSISF20DN-T1-GE3Copy
Order Code
Re-Reel3050578RL
Cut Tape3050578
Product RangeTrenchFET Gen IV Series
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 63 week(s)
Notify me when back in stock
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | CNY20.040 | CNY20.04 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY20.040 (CNY22.6452) |
| 10+ | CNY12.810 (CNY14.4753) |
| 100+ | CNY8.920 (CNY10.0796) |
| 500+ | CNY7.500 (CNY8.475) |
| 1000+ | CNY6.290 (CNY7.1077) |
| 5000+ | CNY6.050 (CNY6.8365) |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSISF20DN-T1-GE3Copy
Order Code
Re-Reel3050578RL
Cut Tape3050578
Product RangeTrenchFET Gen IV Series
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds P Channel60V
Continuous Drain Current Id N Channel52A
Continuous Drain Current Id P Channel52A
Drain Source On State Resistance N Channel0.01ohm
Drain Source On State Resistance P Channel0.01ohm
Transistor Case StylePowerPAK 1212
No. of Pins8Pins
Power Dissipation N Channel69.4W
Power Dissipation P Channel69.4W
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV Series
Qualification-
SVHCLead (04-Feb-2026)
Product Overview
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds P Channel
60V
Continuous Drain Current Id P Channel
52A
Drain Source On State Resistance P Channel
0.01ohm
No. of Pins
8Pins
Power Dissipation P Channel
69.4W
Product Range
TrenchFET Gen IV Series
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
60V
Continuous Drain Current Id N Channel
52A
Drain Source On State Resistance N Channel
0.01ohm
Transistor Case Style
PowerPAK 1212
Power Dissipation N Channel
69.4W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (04-Feb-2026)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0011