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SI9945BDY-T1-GE3
Dual MOSFET, N Channel, 60 V, 5.3 A, 0.046 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI9945BDY-T1-GE3Copy
Order Code
Full Reel3879334
Re-Reel1794822RL
Cut Tape1794822
Your Part Number
15 In Stock
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15 Next business day delivery available(Shanghai stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | CNY24.950 | CNY124.75 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY24.950 (CNY28.1935) |
| 50+ | CNY18.110 (CNY20.4643) |
| 100+ | CNY13.860 (CNY15.6618) |
| 500+ | CNY8.840 (CNY9.9892) |
| 1000+ | CNY7.620 (CNY8.6106) |
Full Reel
| Quantity | Price (inc GST) |
|---|---|
| 2500+ | CNY9.330 (CNY10.5429) |
| 7500+ | CNY6.770 (CNY7.6501) |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI9945BDY-T1-GE3Copy
Order Code
Full Reel3879334
Re-Reel1794822RL
Cut Tape1794822
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel5.3A
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel0.046ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel3.1W
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (04-Feb-2026)
Product Overview
The SI9945BDY-T1-GE3 is a 60V Dual N-channel TrenchFET® Power MOSFET. Suitable for use in LCD TV CCFL inverter and load switch applications. The surface-mounted LITTLE FOOT® power MOSFET uses integrated circuit and small-signal packages which have been modified to provide the heat transfer capabilities required by power devices.
- Halogen-free according to IEC 61249-2-21 definition
Applications
Power Management, Consumer Electronics
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
8Pins
Power Dissipation P Channel
-
Product Range
-
MSL
-
Drain Source Voltage Vds N Channel
60V
Continuous Drain Current Id N Channel
5.3A
Drain Source On State Resistance N Channel
0.046ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
3.1W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (04-Feb-2026)
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000119