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SI9933CDY-T1-GE3
Dual MOSFET, P Channel, 20 V, 4 A
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI9933CDY-T1-GE3Copy
Order Code
Re-Reel1779275RL
Cut Tape1779275
Your Part Number
11,377 In Stock
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11,377 Delivery in 5-6 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | CNY4.990 | CNY24.95 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY4.990 (CNY5.6387) |
| 50+ | CNY4.130 (CNY4.6669) |
| 100+ | CNY3.260 (CNY3.6838) |
| 500+ | CNY2.510 (CNY2.8363) |
| 1000+ | CNY2.280 (CNY2.5764) |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI9933CDY-T1-GE3Copy
Order Code
Re-Reel1779275RL
Cut Tape1779275
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds N Channel-
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id N Channel-
Continuous Drain Current Id P Channel4A
Drain Source On State Resistance N Channel-
Drain Source On State Resistance P Channel0.048ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel-
Power Dissipation P Channel3.1W
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (04-Feb-2026)
Product Overview
The SI9933CDY-T1-GE3 is a -20V Dual P-channel TrenchFET® Power MOSFET. Suitable for DC to DC converters and load switch applications. The surface-mounted LITTLE FOOT® power MOSFET uses integrated circuit and small-signal packages which have been modified to provide the heat transfer capabilities required by power devices.
- Halogen-free according to IEC 61249-2-21 definition
Applications
Power Management
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id P Channel
4A
Drain Source On State Resistance P Channel
0.048ohm
No. of Pins
8Pins
Power Dissipation P Channel
3.1W
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
-
Continuous Drain Current Id N Channel
-
Drain Source On State Resistance N Channel
-
Transistor Case Style
SOIC
Power Dissipation N Channel
-
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (04-Feb-2026)
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Israel
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Israel
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000358