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SI7994DP-T1-GE3
Dual MOSFET, N Channel, 30 V, 30 V, 60 A, 60 A, 4600 µohm
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4,240 In Stock
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY32.560 (CNY36.7928) |
| 10+ | CNY22.080 (CNY24.9504) |
| 100+ | CNY15.860 (CNY17.9218) |
| 500+ | CNY14.770 (CNY16.6901) |
| 1000+ | CNY13.980 (CNY15.7974) |
Price for:Each
Minimum: 1
Multiple: 1
CNY32.56 (CNY36.79 inc GST)
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7994DP-T1-GE3Copy
Order Code2335381
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel60A
Continuous Drain Current Id P Channel60A
Drain Source On State Resistance N Channel4600µohm
Drain Source On State Resistance P Channel4600µohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel3.5W
Power Dissipation P Channel3.5W
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (04-Feb-2026)
Product Overview
The SI7994DP-T1-GE3 is a dual N-channel MOSFET housed in a surface-mount package. It is suitable for system power DC-to-DC conversion, notebook and server applications.
- Halogen-free
- TrenchFET® power MOSFET
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id P Channel
60A
Drain Source On State Resistance P Channel
4600µohm
No. of Pins
8Pins
Power Dissipation P Channel
3.5W
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id N Channel
60A
Drain Source On State Resistance N Channel
4600µohm
Transistor Case Style
SOIC
Power Dissipation N Channel
3.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (04-Feb-2026)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001